Semiconductor device

摘要

An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided.

主权项

1. A semiconductor device comprising:
a substrate; a gate electrode over the substrate; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; a source and a drain over the oxide semiconductor film; and an insulating film over the oxide semiconductor film, wherein a value of an activation energy of the oxide semiconductor film is greater than or equal to 0 meV and less than or equal to 25 meV.