Solid state source introduction of dopants and additives for a plasma doping process

摘要

A method of doping a non-planar surface or a surface of a substrate subject to poor view factors is provided. The processing chamber comprises a window, walls, and a bottom of the processing chamber with oxygen-containing material, the processing chamber configured to supply oxygen radicals as an additive to doping materials. One or more quartz pieces are placed inside the processing chamber, where a magnet proximate to the processing chamber is configured to create a local magnetron plasma inside the processing chamber. Process gas containing an inert gas, sublimated doping materials, and optionally oxygen gas is flowed into the processing chamber; energy is applied to the process gas, generating a doping plasma used to expose a portion of the substrate surface while controlling operating variables to achieve target uniformity of dopant concentration, sheet resistance, degree of dopant clustering, and erosion of features on the substrate.

主权项

1. A method of doping a portion of a surface of a substrate, the surface being non-planar and/or subject to one or more poor view factors, the method comprising:
constructing a microwave window, one or more walls, and a bottom of a process chamber with an oxygen-containing material, wherein the oxygen from the microwave window, the one or more walls and the bottom of the process chamber is configured to supply oxygen radicals as additives to one or more doping materials; providing the substrate having a layer that requires doping, the substrate positioned in the process chamber; placing one or more quartz pieces inside the process chamber; placing one or more magnets proximate to the process chamber, the one or more magnets and the one or more quartz pieces configured to create a local magnetron plasma inside the process chamber; flowing a process gas into the process chamber, wherein the process gas contains an inert gas and one or more sublimated doping materials, and optionally oxygen gas; applying microwave energy to the process gas, the microwave energy having a power, the application of microwave energy generating a doping plasma; exposing the portion of the surface of the substrate to the doping plasma to achieve a target dose of doping materials in the portion of the surface; and controlling one or more operating variables of a doping process in order to achieve a target uniformity of dopant concentration, a target sheet resistance, target degree of dopant clustering, and target erosion of features on the substrate.