Piezoelectric device and method for manufacturing piezoelectric device

摘要

A piezoelectric device includes a piezoelectric thin film formed by separating and forming a piezoelectric single crystal substrate, an inorganic layer formed on a back surface of the piezoelectric thin film, an elastic body layer disposed on a surface opposite to the piezoelectric thin film of the inorganic layer, and a support pasted to a surface opposite to the inorganic layer of the elastic body layer. In a membrane structure portion, the inorganic layer and the elastic body layer are disposed on the piezoelectric thin film through a gap layer. The elastic body layer reduces a stress caused by pasting the piezoelectric thin film including the inorganic layer and the support and has a certain elastic modulus. The inorganic layer is formed with a material having an elastic modulus higher than that of the elastic body layer and suppresses damping caused by disposing the elastic body layer.

主权项

1. A method for manufacturing a piezoelectric device comprising:
an ion implantation process for implanting ionized elements into a piezoelectric substrate to thereby form a portion in which a concentration of elements implanted into the piezoelectric substrate reaches a peak in the piezoelectric substrate; a sacrificial layer formation process for forming a sacrificial layer on a surface at the ion implanted side of the piezoelectric substrate; an inorganic layer formation process for directly forming an inorganic layer on a surface at the ion implanted side of the piezoelectric substrate on which the sacrificial layer is formed; an elastic body layer disposing process for disposing an elastic body layer on a surface opposite to the piezoelectric substrate of the inorganic layer; a pasting process for pasting a support member to the elastic body layer; a peeling process for peeling and forming a piezoelectric thin film from the piezoelectric substrate in which the portion in which the concentration of the elements implanted into the piezoelectric substrate reaches the peak is formed; and a sacrificial layer removal process for removing the sacrificial layer to thereby form a gap layer.