| 发明名称 |
Semiconductor process |
| 摘要 |
A semiconductor process includes the following steps. A substrate having a recess is provided. A decoupled plasma nitridation process is performed to nitride the surface of the recess for forming a nitrogen containing liner on the surface of the recess. A nitrogen containing annealing process is then performed on the nitrogen containing liner. |
| 申请公布号 |
US8889523(B2) |
申请公布日期 |
2014.11.18 |
| 申请号 |
US201213342191 |
申请日期 |
2012.01.02 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Sun Te-Lin;Lin Chien-Liang;Wang Yu-Ren;Yen Ying-Wei |
| 分类号 |
H01L21/76;H01L21/02;H01L21/318;H01L21/762 |
主分类号 |
H01L21/76 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor process, comprising:
providing a substrate having a silicon recess; performing a decoupled plasma nitridation process to nitride the surface of the silicon recess for forming a nitrogen containing liner contacting the surface of the silicon recess; and performing a nitrogen containing annealing process on the nitrogen containing liner. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
