| 发明名称 | Sloped structure, method for manufacturing sloped structure, and spectrum sensor | ||
| 摘要 | A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion; (c) removing the sacrificial film; and (d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate. | ||
| 申请公布号 | US8889463(B2) | 申请公布日期 | 2014.11.18 |
| 申请号 | US201213572192 | 申请日期 | 2012.08.10 |
| 申请人 | Seiko Epson Corporation | 发明人 | Yoshizawa Takahiko |
| 分类号 | H01L31/18;H01L31/0232;G02B5/20;H01L29/06;G01J3/02;H01L31/0216;G02B5/28;G01J1/04;G01J3/36;H01L31/0352;G01J3/12 | 主分类号 | H01L31/18 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A method for manufacturing a sloped structure, the method comprising the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion; (c) removing the sacrificial film; and (d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate. | ||
| 地址 | Tokyo JP | ||