Retention-value associated memory

摘要

A memory component or subsystem is provided. The memory comprises one or more memory devices and one or more write controllers within each of the one or more memory devices that each controls memory-device components to write input data values into a plurality of memory cells within a memory device that represents a unit of stored data addressed by a logical-address-space address, the write controller applying a current to the plurality of memory cells during a WRITE operation with a magnitude that corresponds to a retention value associated with the logical-address-space address.

主权项

1. A memory comprising:
one or more memory devices; and one or more write controllers within each of the one or more memory devices that each controls memory-device components to write input data values into a plurality of memory cells within a memory device that represents a unit of stored data addressed by a logical-address-space address, the write controller applying a current to the plurality of memory cells during a WRITE operation with a magnitude that corresponds to a retention value associated with the logical-address-space address, wherein the retention value corresponds to a selected endurance and retention time tradeoff of the memory, where the retention value is higher for a first scenario favoring retention time over endurance than for a second scenario favoring endurance over retention time, wherein the retention time corresponds to how often the memory cells have to be refreshed to retain contents thereof, and the endurance corresponds to how often the contents of the memory cells are able to be changed before the memory cells degrade, wherein where the memory cells are used as register memory, the retention value is equal to a first value, and where the memory cells are used as archival memory, the retention value is equal to a second value greater than the first value.