| 发明名称 | 6.1 angstrom III-V and II-VI semiconductor platform | ||
| 摘要 | Use of semiconductor materials having a lattice constant of within +/−1.6% of 6.1 angstroms facilitates improved semiconductor device performance and new semiconductor structures, for example integration of field-effect devices and optoelectronic devices on a single wafer. High-mobility channels are enabled, improving device performance. | ||
| 申请公布号 | US8891573(B2) | 申请公布日期 | 2014.11.18 |
| 申请号 | US201313893232 | 申请日期 | 2013.05.13 |
| 申请人 | Arizona Board of Regents | 发明人 | Zhang Yong-Hang |
| 分类号 | H01S5/00;H01S5/30;H01S5/323;H01L21/8252;H01S5/026;H01S5/183;H01L21/8254;H01L29/78;H01L29/267;H01L29/20;H01L27/06;H01L21/8258;H01L29/22;H01S5/042;H01S5/02;H01S5/343 | 主分类号 | H01S5/00 |
| 代理机构 | Snell & Wilmer L.L.P. | 代理人 | Snell & Wilmer L.L.P. |
| 主权项 | 1. A semiconductor system, comprising: a field-effect transistor (FET); and a vertical-cavity surface-emitting laser (VCSEL) comprising an upper distributed Bragg reflector (DBR), an active region, and a bottom DBR, wherein the FET and VCSEL are formed on a single wafer, and wherein the top layer of the lower DBR is directly coupled to the drain of the FET. | ||
| 地址 | Scottsdale AZ US | ||