| 摘要 |
PROBLEM TO BE SOLVED: To improve photoelectric conversion efficiency of a photoelectric conversion device.SOLUTION: A photoelectric conversion device 11 includes: a lower electrode layer 2; a photoelectric conversion layer C provided on the lower electrode layer 2; and an upper electrode layer 5 which is provided on the photoelectric conversion layer C and is made of a semiconductor containing an impurity metal and in which the concentration of the impurity metal changes so as to repeatedly increase and decrease in the thickness direction. |
