发明名称 APPARATUSES, DEVICES AND METHODS FOR SENSING A SNAPBACK EVENT IN A CIRCUIT
摘要 Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.
申请公布号 US2014334237(A1) 申请公布日期 2014.11.13
申请号 US201414318965 申请日期 2014.06.30
申请人 MICRON TECHNOLOGY, INC. 发明人 Hirst Jeremy;Castro Hernan;Tang Stephen
分类号 G11C7/06;G11C7/12 主分类号 G11C7/06
代理机构 代理人
主权项 1. An apparatus comprising: a sense circuit responsive to a snapback event occurring in a memory cell and configured to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.
地址 Boise ID US