发明名称 |
APPARATUSES, DEVICES AND METHODS FOR SENSING A SNAPBACK EVENT IN A CIRCUIT |
摘要 |
Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell. |
申请公布号 |
US2014334237(A1) |
申请公布日期 |
2014.11.13 |
申请号 |
US201414318965 |
申请日期 |
2014.06.30 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Hirst Jeremy;Castro Hernan;Tang Stephen |
分类号 |
G11C7/06;G11C7/12 |
主分类号 |
G11C7/06 |
代理机构 |
|
代理人 |
|
主权项 |
1. An apparatus comprising:
a sense circuit responsive to a snapback event occurring in a memory cell and configured to generate a feed back signal to initiate a change in an electric potential applied to the memory cell. |
地址 |
Boise ID US |