发明名称 |
PROGRAMMABLE ELECTRICAL FUSE WITH TEMPERATURE GRADIENT BETWEEN ANODE AND CATHODE |
摘要 |
In some examples, a programmable electrical fuse includes at least one structural feature that increases a thermal gradient between an anode and a cathode of the programmable electrical fuse. For example, a device may include a semiconductor substrate, an electrically insulating layer overlying the semiconductor substrate, and a programmable electrical fuse overlying a portion of the electrically insulating layer. The programmable electrical fuse may include a cathode, an anode, and a conductor link connecting the cathode and the anode. The electrically insulating layer may define a first thickness between the semiconductor substrate and the cathode and a second thickness between the semiconductor substrate and the anode, and the first thickness being less than the second thickness. |
申请公布号 |
US2014332922(A1) |
申请公布日期 |
2014.11.13 |
申请号 |
US201313891280 |
申请日期 |
2013.05.10 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
Vogt Eric E.;Fechner Paul S.;Shaw Gordon A. |
分类号 |
H01L23/525;H01L21/768 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
1. A device comprising:
a semiconductor layer; an electrically insulating layer overlying the semiconductor substrate; and a programmable electrical fuse overlying a portion of the electrically insulating layer,
wherein the programmable electrical fuse comprises a cathode, an anode, and a conductor link physically connecting the cathode and the anode,wherein the electrically insulating layer defines a first insulating layer thickness between the semiconductor substrate and the cathode and a second insulating layer thickness between the semiconductor substrate and the anode, and wherein the first insulating layer thickness is less than the second insulating layer thickness,wherein a thickness of the cathode, measured in a direction substantially normal to a surface of the semiconductor substrate, is greater than a thickness of the anode, measured in the direction substantially normal to the surface of the semiconductor substrate. |
地址 |
Morristown NJ US |