SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

It is an object of the present invention to provide a method for preventing a breaking and poor contact, without increasing the number of steps, thereby forming an integrated circuit with high driving performance and reliability. The present invention applies a photo mask or a reticle each of which is provided with a diffraction grating pattern or with an auxiliary pattern formed of a semi-translucent film having a light intensity reducing function to a photolithography step for forming wires in an overlapping portion of wires. And a conductive film to serve as a lower wire of a two-layer structure is formed, and then, a resist pattern is formed so that a first layer of the lower wire and a second layer narrower than the first layer are formed for relieving a steep step.

主权项

1. A semiconductor device, comprising:
a first wire formed on an insulating surface; a second wire formed over the first wire and extending in a same direction as the first wire; an interlayer insulating film covering the second wire; and a third wire electrically connected with the first wire and the second wire through an opening portion formed in the interlayer insulating film, wherein in the opening portion, the first wire is wider than the second wire.