发明名称 |
OPTICAL WIRING SUBSTRATE, MANUFACTURING METHOD OF OPTICAL WIRING SUBSTRATE AND OPTICAL MODULE |
摘要 |
An optical wiring substrate includes an insulation layer including a resin, and a conductor layer formed on the insulation layer and including a metal and an inclined surface inclined relative to an optical axis of an optical fiber. A first wiring pattern and a second wiring pattern are formed in the conductor layer, the first wiring pattern including a first connecting part to which a first electrode of a photoelectric conversion element is connected, and the second wiring pattern including a second connecting part to which a second electrode of the photoelectric conversion element is connected. A distance between the first wiring pattern and the second wiring pattern is narrowest between the first connecting part and the second connecting part. A distance between the first connecting part and the second connecting part is less than a dimension of the conductor layer in a thickness direction thereof. |
申请公布号 |
US2014334770(A1) |
申请公布日期 |
2014.11.13 |
申请号 |
US201414197736 |
申请日期 |
2014.03.05 |
申请人 |
Hitachi Metals, Ltd. |
发明人 |
ISHIKAWA Hiroshi;HIRANO Kouki;YASUDA Hiroki |
分类号 |
G02B6/42;H01L31/02;G02B6/136 |
主分类号 |
G02B6/42 |
代理机构 |
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代理人 |
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主权项 |
1. An optical wiring substrate, comprising:
an insulation layer comprising a resin; and a conductor layer formed on the insulation layer and comprising a metal and an inclined surface inclined relative to an optical axis of an optical fiber, wherein a first wiring pattern and a second wiring pattern are formed in the conductor layer, the first wiring pattern comprising a first connecting part to which a first electrode of a photoelectric conversion element is connected, and the second wiring pattern comprising a second connecting part to which a second electrode of the photoelectric conversion element is connected, wherein a distance between the first wiring pattern and the second wiring pattern is narrowest between the first connecting part and the second connecting part, and wherein a distance between the first connecting part and the second connecting part is less than a dimension of the conductor layer in a thickness direction thereof. |
地址 |
Tokyo JP |