发明名称 OPTICAL WIRING SUBSTRATE, MANUFACTURING METHOD OF OPTICAL WIRING SUBSTRATE AND OPTICAL MODULE
摘要 An optical wiring substrate includes an insulation layer including a resin, and a conductor layer formed on the insulation layer and including a metal and an inclined surface inclined relative to an optical axis of an optical fiber. A first wiring pattern and a second wiring pattern are formed in the conductor layer, the first wiring pattern including a first connecting part to which a first electrode of a photoelectric conversion element is connected, and the second wiring pattern including a second connecting part to which a second electrode of the photoelectric conversion element is connected. A distance between the first wiring pattern and the second wiring pattern is narrowest between the first connecting part and the second connecting part. A distance between the first connecting part and the second connecting part is less than a dimension of the conductor layer in a thickness direction thereof.
申请公布号 US2014334770(A1) 申请公布日期 2014.11.13
申请号 US201414197736 申请日期 2014.03.05
申请人 Hitachi Metals, Ltd. 发明人 ISHIKAWA Hiroshi;HIRANO Kouki;YASUDA Hiroki
分类号 G02B6/42;H01L31/02;G02B6/136 主分类号 G02B6/42
代理机构 代理人
主权项 1. An optical wiring substrate, comprising: an insulation layer comprising a resin; and a conductor layer formed on the insulation layer and comprising a metal and an inclined surface inclined relative to an optical axis of an optical fiber, wherein a first wiring pattern and a second wiring pattern are formed in the conductor layer, the first wiring pattern comprising a first connecting part to which a first electrode of a photoelectric conversion element is connected, and the second wiring pattern comprising a second connecting part to which a second electrode of the photoelectric conversion element is connected, wherein a distance between the first wiring pattern and the second wiring pattern is narrowest between the first connecting part and the second connecting part, and wherein a distance between the first connecting part and the second connecting part is less than a dimension of the conductor layer in a thickness direction thereof.
地址 Tokyo JP