| 摘要 |
<p>In order to realize the properties of a display device using an oxide semiconductor, a protection circuit or the like having proper elements and a small occupied area is required. The protection circuit is prepared using a linear element comprising: a gate insulation film to coat a gate electrode; a first oxide semiconductor formed on the gate insulation film; a channel protection layer to cover an area overlapped with a channel forming area of the first oxide semiconductor; and a first line layer and a second line layer formed on the first oxide semiconductor, and have conductive layers and second oxide semiconductors stacked thereon, wherein the gate electrode is connected to a scan line or a signal line and the first or second line layer directly connected to the gate electrode.</p> |
