PREPARATION METHOD OF POROUS GAN

摘要

A preparation method of porous GaN material comprises: placing a GaN material in a mixed solution which is mainly formed by mixing soluble persulfate and alkaline matter, and has a pH value of more than 7; and irradiating said GaN material with ultraviolet light to obtain the porous GaN material. The present invention adopts an extremely inexpensive photochemical technology to produce nano-scale pores on the surface of the GaN material, and micro change of a GaN material resistivity can be detected with a phase-locked amplifier and other micro electrical signal test devices so as to develop gas sensors with high sensitivity.