APPARATUS FOR SPATIAL AND TEMPORAL CONTROL OF TEMPERATURE ON A SUBSTRATE

摘要

An apparatus for control of a temperature of a substrate has a temperature-controlled base, a heater, a metal plate, a layer of dielectric material. The heater is thermally coupled to an underside of the metal plate while being electrically insulated from the metal plate. A first layer of adhesive material bonds the metal plate and the heater to the top surface of the temperature controlled base. This adhesive layer is mechanically flexible, and possesses physical properties designed to balance the thermal energy of the heaters and an external process to provide a desired temperature pattern on the surface of the apparatus. A second layer of adhesive material bonds the layer of dielectric material to a top surface of the metal plate. This second adhesive layer possesses physical properties designed to transfer the desired temperature pattern to the surface of the apparatus.

主权项

1. A substrate support for control of a temperature of a semiconductor substrate supported thereon during plasma processing of the semiconductor substrate comprising:
a temperature-controlled base having a top surface; a plate having a film heater with a plurality of resistive heating elements thermally coupled to an underside of the plate, the film heater electrically insulated from the plate and the plate having a thickness adequate to transfer a spatial pattern of the film heater to the semiconductor substrate; a first layer of adhesive bonding the plate and the heater to the top surface of the temperature-controlled base; and a layer of dielectric material bonded to a top surface of the plate with a second layer of adhesive, the layer of dielectric material forming an electrostatic clamping mechanism for supporting the semiconductor substrate.