| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method and structure for manufacture of photovoltaic materials using a thin-film process including group-IV materials (for example, silicon, germanium, and silicon-germanium alloy) and metal oxides, such as copper oxide.SOLUTION: A device has a nanostructured material positioned between an electron collecting electrode and a hole collecting electrode. An electron transporting/hole blocking material is positioned between the electron collecting electrode and the nanostructured material. In a specific embodiment, negatively charged carriers generated by optical absorption by the nanostructured material are preferentially separated into the electron transporting/hole blocking material. In a specific embodiment, the nanostructured material has an optical absorption coefficient of at least 10cmfor light having wavelengths within the range of about 400 to 700 nm.</p> |
