| 发明名称 |
METHOD FOR PRODUCING GALLIUM NITRIDE |
| 摘要 |
A method for producing a gallium nitride layer using a pulsed laser is disclosed. The method includes (1) providing a substrate; (2) forming a zinc oxide layer on the substrate; and (3) forming a gallium nitride thin film on the zinc oxide layer by pulsed laser deposition (PLD). |
| 申请公布号 |
US2014335683(A1) |
申请公布日期 |
2014.11.13 |
| 申请号 |
US201314021108 |
申请日期 |
2013.09.09 |
| 申请人 |
National Taiwan University |
发明人 |
LIN CHING-FUH;Ku Chun-Wei;Wu Hao-Yu |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for producing a gallium nitride, comprising:
(1) providing a substrate; (2) forming a zinc oxide layer on the substrate; and (3) forming a gallium nitride thin film on the zinc oxide layer by pulsed laser deposition (PLD). |
| 地址 |
Taipei TW |
