| 摘要 |
<p>A material (1) to be etched is provided with a mask layer (12) on a substrate (11), the mask layer having a pattern of a width no greater than 2 µm and an aspect ratio of 0.1-5.0. Also, the total thermal resistance value when mounted on a mounting member (2) used during etching is no greater than 6.79×10-3(m2·K/W). Here, the total thermal resistance value is the sum of the thermal resistance value of the mounting member (2) in the mounting region (X) of the mounting member (2) for the material (1) to be etched, the thermal resistance value of the substrate (11), and, when other members than the material (1) to be etched are present on the mounting member (2), the thermal resistance value of the other members; each thermal resistance value being the value obtained by dividing the thickness of each member by the thermal conductivity (λ) of the materials constituting the member. The material (1) to be etched is etched via the mask layer (12), whereby the desired microrelief structure is formed on the substrate (11).</p> |
