发明名称 VAPOR PHASE EPITAXIAL GROWTH DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a vapor phase epitaxial growth device including a configuration for rotating a substrate holder by transmitting a rotation driving force from a substrate holder rotation driver, through a substrate holder rotation plate provided in the center of a reactor and having a gear on the outer periphery, to a plurality of substrate holders provided around the substrate holder rotation plate and having a gear on the outer periphery, which can rotate the substrate holder stably even in vapor phase epitaxial growth using a plurality of large substrates.SOLUTION: In a vapor phase epitaxial growth device, a substrate holder rotation plate has a configuration held rotatably for a base in the center via bearing balls.</p>
申请公布号 JP2014212204(A) 申请公布日期 2014.11.13
申请号 JP20130087664 申请日期 2013.04.18
申请人 JAPAN PIONICS CO LTD 发明人 TAKAHASHI YUZURU;ISHIHAMA YOSHIYASU;KODAMA YOSHIFUMI
分类号 H01L21/205;C23C16/458;H01L21/683 主分类号 H01L21/205
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