NON-VOLATILE MEMORY DEVICES HAVING AIR GAPS AND METHODS OF MANUFACTURING THE SAME

摘要

Disclosed are non-volatile memory devices and methods of manufacturing the same. The non-volatile memory device includes device isolation patterns defining active portions in a substrate and gate structures disposed on the substrate. The active portions are spaced apart from each other in a first direction and extend in a second direction perpendicular to the first direction. The gate structures are spaced apart from each other in the second direction and extend in the first direction. Each of the device isolation patterns includes a first air gap, and each of a top surface and a bottom surface of the first air gap has a wave-shape in a cross-sectional view taken along the second direction.

主权项

1. A non-volatile memory device comprising:
device isolation patterns defining active portions in a substrate, the active portions spaced apart from each other in a first direction and extending in a second direction perpendicular to the first direction; and gate structures on the substrate, the gate structures spaced apart from each other in the second direction and extending in the first direction, wherein each of the device isolation patterns includes a respective surface that defines a bottom portion of a respective first gap for each of the device isolation patterns; and wherein each of the surfaces has a wave-shape in a cross-sectional view taken along the second direction.