| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having a transistor constituted including an oxide semiconductor and a resistance element constituted including an oxide semiconductor on a same substrate.SOLUTION: A semiconductor device comprises: a resistance element 150 including a first oxide semiconductor layer 208a covered by a nitride insulation layer 212 containing hydrogen; and a transistor 100 including a second oxide semiconductor layer 208b which is covered by an oxide insulation layer 210 and has a same composition as the first oxide semiconductor layer. The carrier density in the second oxide semiconductor layer is different from that in the first oxide semiconductor layer. A treatment for increasing the impurity density in the first oxide semiconductor layer is performed so that the first oxide semiconductor layer has a higher carrier density than the second oxide semiconductor layer. In the first oxide semiconductor layer, a region in contact with the nitride insulation layer has a same conductivity as a region in contact with an electrode layer through a contact hole provided in the nitride insulation layer, because the treatment is performed on a whole surface after the first oxide semiconductor layer is processed into island shapes.</p> |
