LIGHT EMITTING DIODE ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

An n-type GaN layer (24) comprising n-type gallium nitride (GaN) is formed on a sapphire substrate (22), and a plurality of island-shaped layered structures (28), which are formed by a plurality of layers of AlN base layers (30) comprising aluminum nitride (AlN), AlN layers (34), and InGaN layers (32) comprising indium gallium nitride (InGaN) and which have randomly distributed sizes, are provided between the n-type GaN layer (24) and a p-type GaN layer (26) comprising p-type GaN. Because light of mutually differing wavelengths is produced by the layered structures (28), light can be produced over a wider range of wavelengths.