| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, an electrooptical device, a method of manufacturing a semiconductor device, a method of manufacturing an electrooptical device, and electronic equipment, capable of improving the reliability.SOLUTION: A base insulating layer 11a has a recessed part 12 including: a rear face 12f provided on a first base material 10a side; a first face 12a, a second face 12b, and a third face 12c opposed to the rear face 12f; a fourth face 12d arranged between the first face 12a and the third face 12c; a fifth face 12e arranged between the second face 12b and the third face 12c. A semiconductor layer 30a is arranged on the first face 12a to the second face 12b. A gate electrode 30g is arranged so as to be opposed to the semiconductor layer 30a at least on the third face 12c, the fourth face 12d, and the fifth face 12e, via a gate insulating layer 11g. |
