| 摘要 |
PURPOSE:To achieve low power consumption of RAM, by making the power consumption at chip non-selection to about zero and by reducing the power consumption at chip non-selection, static RAM of static interface type. CONSTITUTION:MISFETM1 to M6 driven with the address signal are provided, and the output deo of the inverter constituting FETM1 to M6 and charge load MISFETN7 to is fid to the memory cell 1 via the word line through the MSFETM8 M12 constituting the line drive circuit and the cell located in matrix constituting the memory cell 1. The circuit with the FF constituted with the MISFET8 to M12 of the drive circuit with this constitution is taken as the line selection decoder so that the output signal is outputted to the Word line with the address signal, and the line selection decoder input signal is inputted to the gate of the memory cell 1 delivery FETM18, M19 and M23, MU26... so that the decoder output is made to non-selection state at chip selection other than the output signal of the address buffer etc. being he input to the decoder. |
