METHOD FOR PRODUCING SPOT SIZE CONVERTER

摘要

A method for producing a spot size converter includes the steps of forming a first insulator mask on a stacked semiconductor layer; forming first and second terraces, and a waveguide mesa disposed between the first and second terraces by etching the stacked semiconductor layer using the first insulator mask, the first terrace having first to fourth terrace portions, the second terrace having fifth to eighth terrace portions, the waveguide mesa having first to fourth mesa portions; forming a second insulator mask including a first pattern on the first terrace portion, a second pattern on the fifth terrace portion, a third pattern on the third and fourth mesa portions, and a fourth pattern that integrally covers a region extending from the fourth terrace portion to the eighth terrace portion through the fourth mesa portion; and selectively growing a semiconductor layer by using the second insulator mask.

主权项

1. A method for producing a spot size converter comprising the steps of:
preparing a substrate including a main surface having a first area, a second area, a third area, and a fourth area that are arranged in a direction of a waveguide axis; forming a stacked semiconductor layer disposed on the main surface of the substrate; forming a first insulator mask on the stacked semiconductor layer; forming a substrate product including a first terrace, a second terrace, and a waveguide mesa disposed between the first terrace and the second terrace by etching the stacked semiconductor layer using the first insulator mask, the first terrace having a first terrace portion, a second terrace portion, a third terrace portion, and a fourth terrace portion that are respectively disposed on the first area, the second area, the third area, and the fourth area, the second terrace having a fifth terrace portion, a sixth terrace portion, a seventh terrace portion, and an eighth terrace portion that are respectively disposed on the first area, the second area, the third area, and the fourth area, the waveguide mesa having a first mesa portion, a second mesa portion, a third mesa portion, and a fourth mesa portion that are respectively disposed on the first area, the second area, the third area, and the fourth area; forming a second insulator mask on the substrate product, the second insulator mask including a first pattern disposed on the first terrace portion, a second pattern disposed on the fifth terrace portion, a third pattern disposed on the third mesa portion and the fourth mesa portion, and a fourth pattern that integrally covers a region extending from the fourth terrace portion to the eighth terrace portion through the fourth mesa portion; and selectively growing a semiconductor layer on the substrate product by using the second insulator mask.