发明名称 プラズマ処理ツールのためのイン・サイチュプロセス監視および制御のための方法と構成
摘要 <p>A method for detecting an in-situ fast transient event within a processing chamber during substrate processing is provided. The method includes a set of sensors comparing a data set to a set of criteria (in-situ fast transient events) to determine if the first data set includes a potential in-situ fast transient event. If the first data set includes the potential in-situ fast transient event, the method also includes saving an electrical signature that occurs in a time period during which the potential in-situ fast transient event occurs. The method further includes comparing the electrical signature against a set of stored arc signatures. If a match is determined, the method yet also includes classifying the electrical signature as a first in-situ fast transient event and determining a severity level for the first in-situ fast transient event based on a predefined set of threshold ranges.</p>
申请公布号 JP5624618(B2) 申请公布日期 2014.11.12
申请号 JP20120518582 申请日期 2010.06.29
申请人 发明人
分类号 H01L21/02 主分类号 H01L21/02
代理机构 代理人
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