| 摘要 |
PROBLEM TO BE SOLVED: To provide a means capable of inspecting the L/D area and B-band area with high sensitivity in a silicon single crystal having low oxygen concentration. SOLUTION: An inspection method for the silicon single crystal is provided. One embodiment includes: contaminating the surface of the sample cut out from a silicon single crystal ingot grown by the Czochralski method and having (former ASTM) less than 12E17 atoms/cm<SP POS="POST">3</SP>with copper, ; applying heating and cooling treatment for quenching the sample after contamination, at a cooling rate exceeding 2.5°C/min from the temperature area after heating for 5 min or more in a temperature area of 700°C or more and less than 800°C; selectively etching the sample surface after the heating and cooling treatment; and identifying the area wherein pits of the sample surface after selectively etched are locally present as the L/D area. Another embodiment includes identifying the B-band area from comparison results between two samples applied by different treatment. COPYRIGHT: (C)2012,JPO&INPIT |
