发明名称 |
SEMICONDUCTOR STRUCTURE, DEVICE COMPRISING SUCH A STRUCTURE, AND METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE |
摘要 |
A semi-conducting structure, configured to receive an electromagnetic radiation and to transform the electromagnetic radiation into an electric signal, including: a first zone and a second zone of a same conductivity type and of same elements; a barrier zone, provided between the first and second zones, for acting as a barrier to majority carriers of the first and second zones on a barrier thickness, the barrier zone having its lowest bandgap energy defining a barrier proportion; and a first interface zone configured to interface the first zone and the barrier zone on a first interface thickness, the first interface zone including a composition of elements which is varied from a proportion corresponding to that of the first material to the barrier proportion, the first interface thickness being at least equal to half the barrier thickness. |
申请公布号 |
EP2801117(A2) |
申请公布日期 |
2014.11.12 |
申请号 |
EP20130700059 |
申请日期 |
2013.01.02 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
GRAVRAND, OLIVIER;FERRON, ALEXANDRE |
分类号 |
H01L31/09;H01L31/101;H01L31/18 |
主分类号 |
H01L31/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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