发明名称 SEMICONDUCTOR STRUCTURE, DEVICE COMPRISING SUCH A STRUCTURE, AND METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE
摘要 A semi-conducting structure, configured to receive an electromagnetic radiation and to transform the electromagnetic radiation into an electric signal, including: a first zone and a second zone of a same conductivity type and of same elements; a barrier zone, provided between the first and second zones, for acting as a barrier to majority carriers of the first and second zones on a barrier thickness, the barrier zone having its lowest bandgap energy defining a barrier proportion; and a first interface zone configured to interface the first zone and the barrier zone on a first interface thickness, the first interface zone including a composition of elements which is varied from a proportion corresponding to that of the first material to the barrier proportion, the first interface thickness being at least equal to half the barrier thickness.
申请公布号 EP2801117(A2) 申请公布日期 2014.11.12
申请号 EP20130700059 申请日期 2013.01.02
申请人 COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES 发明人 GRAVRAND, OLIVIER;FERRON, ALEXANDRE
分类号 H01L31/09;H01L31/101;H01L31/18 主分类号 H01L31/09
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