| 摘要 |
A method of electron beam lithography for producing wafers and masks. To reduce the impacts of the disturbing proximity effect, an expanded correction algorithm that enables a more accurate correction is used to control the electron beam. To create an improved correction method by means of which the contrast and the feature width (CD) of all figures of a pattern can be optimally controlled additional contrast frames (KR) and remaining figures (R) are produced using a geometric method for the purpose of contrast control with respect to all figures (F). Then smaller figures (KRsize-S and Rsize-S) are produced from the contrast frame figures (KR) and remaining figures (R) by means of a negative sizing operation, and subsequently figures (KRsize-S and Rsize-S) are transferred to the proximity correction algorithm with the condition that the resist threshold is reached at the edges of the figures (KR, R) by the dose assignment. |
