发明名称 METHOD FOR MANUFACTURING HEXAGONAL SEMICONDUCTOR PLATE CRYSTAL
摘要 <p>A method of efficiently manufacturing a hexagonal semiconductor plate crystal with small warpage is provided. The method of manufacturing a hexagonal semiconductor plate crystal is a method of manufacturing a hexagonal semiconductor plate crystal by cutting a hexagonal semiconductor crystal using a crystal cutting wire, wherein the hexagonal semiconductor crystal is cut by causing the crystal cutting wire to move relative to the hexagonal semiconductor crystal so as to satisfy the conditions of 25°<±<90° and ²=90°±5° [where ± represents an angle formed by the c axis of the hexagonal semiconductor crystal and the normal line of the crystal face cut out by the wire and ² represents an angle formed by a reference axis, which is obtained by perpendicularly projecting the c axis of the hexagonal semiconductor crystal to the crystal face cut out by the wire, and a cutting direction].</p>
申请公布号 EP2660856(A4) 申请公布日期 2014.11.12
申请号 EP20110852771 申请日期 2011.12.21
申请人 MITSUBISHI CHEMICAL CORPORATION 发明人 UCHIDA HIROFUMI;OKANO YUKIO
分类号 H01L21/304;B24B27/06;B28D5/04;C30B29/40;C30B29/60;C30B33/06 主分类号 H01L21/304
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