| 发明名称 | Separation of semiconductor devices from a wafer carrier | ||
| 摘要 | In accordance with an embodiment of the present invention, a semiconductor device is manufactured by arranging a plurality of semiconductor devices on a frame with an adhesive foil. The plurality of semiconductor devices is attached to the adhesive foil. The plurality of semiconductor devices is removed from the frame with the adhesive foil using a carbon dioxide snow jet and/or a laser process. | ||
| 申请公布号 | US8883565(B2) | 申请公布日期 | 2014.11.11 |
| 申请号 | US201113252816 | 申请日期 | 2011.10.04 |
| 申请人 | Infineon Technologies AG | 发明人 | Vaupel Mathias;Bernrieder Sebastian;Koller Adolf;Martens Stefan |
| 分类号 | H01L21/00;H01L21/78;H01L21/683;H01L21/67;H01L21/50;H01L21/56;H01L23/31 | 主分类号 | H01L21/00 |
| 代理机构 | Slater & Matsil, L.L.P. | 代理人 | Slater & Matsil, L.L.P. |
| 主权项 | 1. A method of manufacturing semiconductor devices, the method comprising: arranging a plurality of semiconductor devices on a frame with an adhesive foil, the plurality of semiconductor devices being attached to the adhesive foil; and removing the plurality of semiconductor devices from the frame with the adhesive foil using a carbon dioxide snow jet, wherein the removing of the plurality of semiconductor devices from the frame comprises exposing a first side of the plurality of semiconductor devices to the carbon dioxide snow jet, wherein the first side is opposite a second side facing the adhesive foil. | ||
| 地址 | Neubiberg DE | ||