Semiconductor device and producing method thereof

摘要

A semiconductor device manufacturing method includes forming a fin region over a substrate, forming a dummy gate electrode over the fin region, forming a first insulating film over the dummy gate electrode and the fin region, polishing the first insulating film until the dummy gate electrode is exposed, removing part of the exposed dummy gate electrode to form a trench, forming a gate insulator over the surface of the fin region exposed in the trench, and forming a gate electrode over the gate insulator.

主权项

1. A semiconductor device manufacturing method comprising:
forming a fin region over a substrate, the fin region having an apex portion and a sidewall portion and extending in a first direction; forming a dummy gate electrode over the fin region, the dummy gate electrode extending in a second direction different from the first direction; forming a first insulating film over the dummy gate electrode and the fin region; polishing the first insulating film until the dummy gate electrode is exposed; removing at least part of the exposed dummy gate electrode to form a trench, a surface of the fin region being exposed in the trench while leaving at least part of the dummy gate electrode positioned under the first insulating film and a second part of the dummy gate electrode at a bottom portion of the trench without removing; after removing the exposed dummy gate electrode, forming a gate insulator over the surface of the fin region exposed in the trench; depositing a gate electrode material over the gate insulator and over the first insulating film; and polishing the gate electrode material over the first insulating film until the first insulating film is exposed to form a gate electrode.