Method of semiconductor integrated circuit fabrication

摘要

A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate having two different topography areas adjacent to each other. A step-forming material (SFM) is deposited over the substrate. A patterned SFM is formed in the low topography area of the two areas. The formation of the patterned SFM provides a fairly planar surface across over the substrate.

主权项

1. A method for fabricating a semiconductor integrated circuit (IC), the method comprising:
providing a substrate having a first area and a second area, wherein a top surface of the first area is in a different plane than a top surface of the second area; depositing a photosensitive step-forming-material (SFM) over the first and second areas; and removing the SFM from the second area, thereby forming a patterned photosensitive SFM in the first area; wherein the height difference between top surfaces of the first area and the second area is about 1500 Å to about 3500 Å.