Vertical power MOSFET and methods of forming the same

摘要

A device includes a semiconductor layer of a first conductivity type, and a first and a second body region over the semiconductor layer, wherein the first and the second body regions are of a second conductivity type opposite the first conductivity type. A doped semiconductor region of the first conductivity type is disposed between and contacting the first and the second body regions. A gate dielectric layer is disposed over the first and the second body regions and the doped semiconductor region. A first and a second gate electrode are disposed over the gate dielectric layer, and overlapping the first and the second body regions, respectively. The first and the second gate electrodes are physically separated from each other by a space, and are electrically interconnected. The space between the first and the second gate electrodes overlaps the doped semiconductor region.

主权项

1. A device comprising:
a semiconductor layer of a first conductivity type; a first and a second body region over the semiconductor layer, wherein the first and the second body regions are of a second conductivity type opposite the first conductivity type; a doped semiconductor region of the first conductivity type between and contacting the first and the second body regions; a gate dielectric layer over the first and the second body regions and the doped semiconductor region; a first gate electrode over the gate dielectric layer, wherein the first gate electrode comprises a first edge, and wherein the first gate electrode overlaps the first body region; a second gate electrode over the gate dielectric layer and electrically coupled to the first gate electrode, wherein the second gate electrode overlaps the second body region, wherein the second gate electrode comprises a second edge separated from the first edge by a space, with no additional gate electrode disposed between the first edge and the second edge, and wherein the space overlaps the doped semiconductor region; and a source region comprising:
first portions over the first and the second body regions; anda second portion disposed in the space.