Substrate processing apparatus and method of manufacturing semiconductor device

摘要

A substrate processing apparatus includes: a process chamber having an object to be heated therein and configured to process a plurality of substrates; a substrate holder configured to hold the substrates with an interval therebetween in a vertical direction in the process chamber; a first heat exchange unit supporting the substrate holder from a lower side thereof in the process chamber and configured to perform a heat exchange with a gas in the process chamber; a second heat exchange unit provided in the process chamber, the second heat exchange unit being horizontally spaced apart from the first heat exchange unit with a gap therebetween and being configured to perform a heat exchange with the gas in the process chamber; and an induction heating unit configured to subject the object to be heated to an induction heating from an outer side of the object to be heated.

主权项

1. A substrate processing apparatus comprising:
a process chamber having an object to be heated therein and configured to process a plurality of substrates; a substrate holder configured to hold the plurality of substrates with an interval therebetween in a vertical direction in the process chamber; a first heat exchange unit supporting the substrate holder from a lower side thereof in the process chamber, the first heat exchange unit having a wall configured to perform a heat exchange with a gas for processing the substrates in the process chamber; a second heat exchange unit provided in the process chamber, the second heat exchange unit having a wall that is horizontally spaced apart from and facing the wall of the first heat exchange unit to form a horizontal gap therebetween in the process chamber and being configured to perform a heat exchange with the gas in the process chamber; an induction heating unit configured to subject the object to be heated to an induction heating from an outer side of the object to be heated; and an exhaust port disposed lower than the first heat exchange unit and the second heat exchange unit walls, the exhaust port being configured to exhaust the gas in the process chamber, wherein the facing walls of the first and second heat exchange units are each configured to contact the gas as the gas passes from the substrate holder to the exhaust port through the horizontal gap in the process chamber so as to promote the heat exchanges.