| 摘要 |
<p>An oxide thin film transistor and a method for manufacturing the same according to the present invention include, in an oxide thin film transistor using an amorphous ZnO based semiconductor as an active layer, securing a tunneling diode with a source/drain electrode by forming a thin insulating layer of metal oxide on the active layer. Thereby, damage to the active layer due to the patterning of the source/drain electrode can be prevented, and processes can be simplified at the same time.</p> |
