ETCHING METHOD, ETCHING SOLUTION USED IN SAME, ETCHING SOLUTION KIT, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT

摘要

The present invention is an etching method which, with regard to a semiconductor substrate having a first layer including germanium (Ge), and a second layer that includes at least one type of specific metal element selected from nickel platinum (NiPt), titanium (Ti), nickel (Ni), and cobalt (Co), selectively removes the second layer, said etching method removing the second layer by causing an etching solution including an organic alkali compound to come into contact with the second layer.