发明名称 PHOSPHORUS-DOPED ZINC OXIDE AND PRODUCTION METHOD THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a columnar crystal of zinc oxide doped with phosphorus in a desired concentration, preferably in the form of a densified film, and a very simple and inexpensive method of producing the crystal.SOLUTION: A phosphorus-doped zinc oxide comprises a columnar zinc oxide crystal doped with phosphorus in a concentration of 0.01 at% or higher. The phosphorus-doped zinc oxide can be produced by a method including a step of preparing a raw material aqueous solution which contains a zinc source consisting of zinc ion and at least one phosphorus source selected from phosphate ion, hydrogenphosphate ion, dihydrogenphosphate ion and phosphoric acid and has a pH of higher than 11.0 and a step of immersing a substrate in the raw material aqueous solution to precipitate columnar crystals of the phosphorus-doped zinc oxide on the substrate.</p>
申请公布号 JP2014208576(A) 申请公布日期 2014.11.06
申请号 JP20140058779 申请日期 2014.03.20
申请人 NAGOYA INSTITUTE OF TECHNOLOGY;NGK INSULATORS LTD 发明人 ICHIKAWA HIROSHI;KAWASAKI SHINJI;KATSUTA YUJI;SATO YOSUKE
分类号 C30B29/16;C30B7/04;C30B33/02 主分类号 C30B29/16
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