发明名称 |
PHOSPHORUS-DOPED ZINC OXIDE AND PRODUCTION METHOD THEREOF |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a columnar crystal of zinc oxide doped with phosphorus in a desired concentration, preferably in the form of a densified film, and a very simple and inexpensive method of producing the crystal.SOLUTION: A phosphorus-doped zinc oxide comprises a columnar zinc oxide crystal doped with phosphorus in a concentration of 0.01 at% or higher. The phosphorus-doped zinc oxide can be produced by a method including a step of preparing a raw material aqueous solution which contains a zinc source consisting of zinc ion and at least one phosphorus source selected from phosphate ion, hydrogenphosphate ion, dihydrogenphosphate ion and phosphoric acid and has a pH of higher than 11.0 and a step of immersing a substrate in the raw material aqueous solution to precipitate columnar crystals of the phosphorus-doped zinc oxide on the substrate.</p> |
申请公布号 |
JP2014208576(A) |
申请公布日期 |
2014.11.06 |
申请号 |
JP20140058779 |
申请日期 |
2014.03.20 |
申请人 |
NAGOYA INSTITUTE OF TECHNOLOGY;NGK INSULATORS LTD |
发明人 |
ICHIKAWA HIROSHI;KAWASAKI SHINJI;KATSUTA YUJI;SATO YOSUKE |
分类号 |
C30B29/16;C30B7/04;C30B33/02 |
主分类号 |
C30B29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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