发明名称 GAS FIELD IONIZATION ION SOURCE AND ION BEAM DEVICE
摘要 Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode (1) and the temperature of a gas injection port part (3) of a gas supply unit.
申请公布号 US2014326897(A1) 申请公布日期 2014.11.06
申请号 US201414332923 申请日期 2014.07.16
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 KAWANAMI Yoshimi;ISHITANI Tohru
分类号 H01J37/08 主分类号 H01J37/08
代理机构 代理人
主权项 1. An ion beam device, comprising: a sample stage holding a sample; a gas field ionization ion source emitting an ion beam generated by a gas mixture mainly containing gases of plural elements; a lens system converging the ion beam and projecting the ion beam onto the sample; a deflection system deflecting the ion beam to change an irradiation position of the ion beam on the sample; a secondary particle detector detecting secondary particles emitted from the sample; an image processing unit forming an observation image of the sample using a result of detection by the secondary particle detector; and a controller controlling the lens system and the deflection system to adjust the irradiation position of the ion beam, wherein the image processing unit forms the observation image corresponding to at least two species of ion beams emitted from the gas field ionization ion source, and compares multiple of the observation images to form a new image.
地址 TOKYO JP