发明名称 |
Optoelectronic Arrangement Provided with a Semiconductor Nanowire with a Longitudinal Section that is Surrounded by a Part of a Mirror |
摘要 |
The optoelectronic arrangement comprises a semiconductor nanowire intended to participate in the processing, notably in a reception and/or an emission, of a light concerned and a mirror reflecting the light concerned. The semiconductor nanowire comprises a first section and a second section, and the mirror surrounds, at least longitudinally, the first section of the semiconductor nanowire, said second section extending out of the mirror. |
申请公布号 |
US2014326945(A1) |
申请公布日期 |
2014.11.06 |
申请号 |
US201414268624 |
申请日期 |
2014.05.02 |
申请人 |
Commissariat a L'energie Atomique et aux Energies Alternatives ;CNRS |
发明人 |
Gerard Jean-Michel;Claudon Julien;Lalanne Philippe |
分类号 |
H01L31/0352;H01L33/00;H01L31/18;H01L33/06 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
1. An optoelectronic arrangement comprising:
a semiconductor nanowire to participate in the processing of a light, the semiconductor nanowire comprising a first section and a second section: and a mirror to reflect the light, said mirror surrounding at least longitudinally, the first section of the semiconductor nanowire, said second section extending out of the mirror, wherein: an aperture of the mirror wholly or partly filled by the first section has lateral aperture dimensions less than λ/5n, with n being the refractive index of the material of the first section of the semiconductor nanowire, and λ being the wavelength of the light, the mirror rests on a substrate and comprises a layer that is reflective to the light and a buffer layer that is transparent to the light increasing the reflectivity of the mirror, the reflecting layer being arranged between the substrate and the buffer layer. |
地址 |
Paris FR |