发明名称 CYLINDRICAL SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a cylindrical sputtering target formed of a Cu-Ga alloy capable of reducing cracks, and to provide a manufacturing method thereof, concerning a Cu-Ga alloy sputtering target used for deposition of a light absorption layer of a compound semiconductor.SOLUTION: A cylindrical sputtering target is formed of casting using a Cu alloy containing Ga as much as 15-35 atom% in which the mean value of ratios of each major axis and each minor axis of crystal grains in the Cu alloy is 2.0 or less.
申请公布号 JP2014208877(A) 申请公布日期 2014.11.06
申请号 JP20130240056 申请日期 2013.11.20
申请人 MITSUBISHI MATERIALS CORP 发明人 KATO SHINJI;CHO SHUHIN;KOMIYAMA SHOZO
分类号 C23C14/34;B22D11/00;B22D13/02;C22C1/02;C22C9/00 主分类号 C23C14/34
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