发明名称 |
CYLINDRICAL SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a cylindrical sputtering target formed of a Cu-Ga alloy capable of reducing cracks, and to provide a manufacturing method thereof, concerning a Cu-Ga alloy sputtering target used for deposition of a light absorption layer of a compound semiconductor.SOLUTION: A cylindrical sputtering target is formed of casting using a Cu alloy containing Ga as much as 15-35 atom% in which the mean value of ratios of each major axis and each minor axis of crystal grains in the Cu alloy is 2.0 or less. |
申请公布号 |
JP2014208877(A) |
申请公布日期 |
2014.11.06 |
申请号 |
JP20130240056 |
申请日期 |
2013.11.20 |
申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
KATO SHINJI;CHO SHUHIN;KOMIYAMA SHOZO |
分类号 |
C23C14/34;B22D11/00;B22D13/02;C22C1/02;C22C9/00 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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