| 发明名称 |
DUAL SHALLOW TRENCH ISOLATION (STI) FIELD EFFECT TRANSISTOR (FET) AND METHODS OF FORMING |
| 摘要 |
Various embodiments include field effect transistor (FET) structures and methods of forming such structures. In various embodiments, an FET structure includes: a deep n-type well; an shallow n-type well and a p-type well each within the deep n-type well; and a shallow trench isolation (STI) region within the shallow n-type well, the STI region including: a first section having a first depth within the shallow n-type well as measured from an upper surface of the shallow n-type well; and a second section contacting and overlying the first section, the second section having a second depth within the shallow n-type well as measured from the upper surface of the shallow n-type well. |
| 申请公布号 |
US2014327084(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
US201313874922 |
申请日期 |
2013.05.01 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Feilchenfeld Natalie B.;Levy Max G.;Phelps Richard A.;Sharma Santosh;Shi Yun;Zierak Michael J. |
| 分类号 |
H01L29/06;H01L21/762 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A field effect transistor (FET) structure, comprising:
a deep n-type well; a shallow n-type well and a p-type well each within the deep n-type well; and a shallow trench isolation (STI) region within the shallow n-type well, the STI region including:
a first section having a first depth within the shallow n-type well as measured from an upper surface of the shallow n-type well; anda second section contacting and overlying the first section, the second section having a second depth within the shallow n-type well as measured from the upper surface of the shallow n-type well. |
| 地址 |
Armonk NY US |
