| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for etching a film including a transition metal using a substrate processing device.SOLUTION: A substrate processing device comprises: a processing container defining a processing chamber and a plasma generating chamber; and a shielding part provided between the processing chamber and the plasma generating chamber, including a plurality of openings for communicating between the processing chamber and the plasma generating chamber, and having shielding properties to ultraviolet light. A method for etching a film including a transition metal using a substrate processing device comprises: (a) a step ST1 of supplying neutral particles of an oxygen atom to a processing chamber housing a workpiece having the film by generating plasma of a first gas containing oxygen in the plasma generating chamber; (b) a step ST2 of supplying a second gas for complexing the oxidized transition metal to the processing chamber; and (c) a step ST3 of supplying neutral particles of a rare gas atom to the processing chamber by generating plasma of a rare gas in the plasma generating chamber. |
