发明名称 |
Method for Mounting a Semiconductor Chip on a Carrier |
摘要 |
A method includes providing a semiconductor chip having a first main surface and a layer of solder material deposited on the first main surface, wherein the layer of solder material has a roughness of at least 1 μm. The semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. The semiconductor chip is pressed on the carrier with a pressure of at least 1 Newton per mm2 of surface area of the first main surface and heat is applied to the solder material. |
申请公布号 |
US2014329361(A1) |
申请公布日期 |
2014.11.06 |
申请号 |
US201414335660 |
申请日期 |
2014.07.18 |
申请人 |
Infineon Technologies AG |
发明人 |
Heinrich Alexander;Roesl Konrad;Eichinger Oliver |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method comprising:
placing a semiconductor chip with a solder layer on a carrier, wherein the solder layer has a first main surface and a second main surface, wherein the first main surface is adjacent to the semiconductor chip and the second main surface comprising a rough surface is adjacent to the carrier, and wherein the solder layer comprises solder materials; applying a first temperature below a melting temperature of one of the solder materials thereby forming intermetallic phases between a first portion of the solder layer and the carrier; and applying a second temperature that is higher than the melting temperature of the solder layer but lower than a melting temperature of the intermetallic phases thereby melting the solder layer. |
地址 |
Neubiberg DE |