NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A method of manufacturing a nitride semiconductor light emitting device includes forming a first conductivity type nitride semiconductor layer. An active layer is formed on the first conductivity type nitride semiconductor layer. A second conductivity type nitride semiconductor layer is formed on the active layer. In the forming of the active layer, quantum well layers and quantum barrier layers are alternatively stacked and at least two dopant layers are formed inside of at least one of the quantum well layers. The dopant layers are doped with a dopant in a predetermined concentration.

主权项

1. A method of manufacturing a nitride semiconductor light emitting device, the method comprising:
forming a first conductivity type nitride semiconductor layer; forming an active layer on the first conductivity type nitride semiconductor layer; and forming a second conductivity type nitride semiconductor layer on the active layer, wherein the forming of the active layer includes alternately stacking quantum well layers and quantum barrier layers and forming at least two dopant layers inside of at least one of the quantum well layers, the at least two dopant layers being doped with a dopant in a predetermined concentration.