INTERCONNECT STRUCTURE AND METHOD OF MAKING SAME

摘要

An interconnect structure and method of fabricating the same is provided. More specifically, the interconnect structure is a defect free capped interconnect structure. The structure includes a conductive material formed in a trench of a planarized dielectric layer which is devoid of cap material. The structure further includes the cap material formed on the conductive material to prevent migration. The method of forming a structure includes selectively depositing a sacrificial material over a dielectric material and providing a metal capping layer over a conductive layer within a trench of the dielectric material. The method further includes removing the sacrificial material with any unwanted deposited or nucleated metal capping layer thereon.

主权项

1. A method of forming a structure, comprising:
selectively depositing a sacrificial material over a dielectric material; providing a metal capping layer over a conductive layer within a trench of the dielectric material, wherein a plurality of isolated deposits of unwanted deposited or nucleated metal capping material is formed over the dielectric material during the providing the metal capping layer; and removing the sacrificial material with the plurality of isolated deposits of unwanted deposited or nucleated metal capping material thereon.