METAL-CHALOGENIDE PHOTOVOLTAIC DEVICE WITH METAL-OXIDE NANOPARTICLE WINDOW LAYER

摘要

A metal-chalcogenide photovoltaic device includes a first electrode, a window layer spaced apart from the first electrode, and a photon-absorption layer between the first electrode and the window layer. The photon-absorption layer includes a metal-chalcogenide semiconductor. The window layer includes a layer of metal-oxide nanoparticles, and at least a portion of the window layer provides a second electrode that is substantially transparent to light within a range of operating wavelengths of the metal-chalcogenide photovoltaic device. A method of producing a metal-chalcogenide photovoltaic device includes providing a photovoltaic substructure, providing a solution of metal-oxide nanoparticles, and forming a window layer on the substructure using the solution of metal-oxide nanoparticles such that the window layer includes a layer of metal-oxide nanoparticles formed by a solution process.

主权项

1. A metal-chalcogenide photovoltaic device, comprising:
a first electrode; a window layer spaced apart from said first electrode; and a photon-absorption layer between said first electrode and said window layer, wherein said photon-absorption layer comprises a metal-chalcogenide semiconductor, wherein said window layer comprises a layer of metal-oxide nanoparticles, and wherein at least a portion of said window layer provides a second electrode that is substantially transparent to light within a range of operating wavelengths of said metal-chalcogenide photovoltaic device.