| 摘要 |
<p>The present invention relates to a method for depositing a SiC thin film and a susceptor deposited with a SiC thin film and, more specifically, to a method for depositing a SiC thin film on a graphite base material and a susceptor deposited with a SiC thin film capable of preventing a SiC thin film from being delaminated or cracked by increasing attachment performance of the SiC thin film by forming a buffer layer, a base material deposited with a SiC thin film, between a graphite base material and a SiC thin film. According to the present invention, the method for depositing a SiC thin film on a graphite base material includes: 1) a step for depositing a silicon (Si) film on a graphite base material; 2) a step of applying silicon carbide (SiC) to a portion of the silicon film by reacting the base material deposited with the silicon film at a high temperature; and 3) a step of depositing the silicon carbide film on the base material.</p> |
