发明名称 |
FIELD EFFECT TRANSISTOR DEVICES WITH LOW SOURCE RESISTANCE |
摘要 |
<p>A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.</p> |
申请公布号 |
EP2705527(A4) |
申请公布日期 |
2014.11.05 |
申请号 |
EP20120782360 |
申请日期 |
2012.03.01 |
申请人 |
CREE, INC. |
发明人 |
RYU, SEI-HYUNG;CAPELL, DOYLE CRAIG;CHENG, LIN;DHAR, SARIT;JONAS, CHARLOTTE;AGARWAL, ANANT;PALMOUR, JOHN |
分类号 |
H01L29/06;H01L29/739;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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