发明名称 |
2DEG-based sensor and device for ECG sensing |
摘要 |
The invention relates to a sensor (1) comprising: a substrate layer (100); a GaN/AlGaN hetero-junction structure (105, 110) configured so as to form a 2DEG channel (120) within said structure; and ohmic contacts (115) connected to electrical metallizations (125) and to the 2DEG channel; wherein the GaN/AlGaN hetero-junction structure (105, 110) has a recessed area between the ohmic contacts (115); and a dielectric layer (130) on top of the sensor. The invention also relates to a device for ECG sensing, a use of a sensor for ECG sensing and a method for ECG detection. |
申请公布号 |
EP2799852(A1) |
申请公布日期 |
2014.11.05 |
申请号 |
EP20140166250 |
申请日期 |
2014.04.28 |
申请人 |
STICHTING IMEC NEDERLAND |
发明人 |
VITUSHINSKY, ROMAN;OFFERMANS, PETER |
分类号 |
G01N27/12;A61B5/0408;G01N27/414 |
主分类号 |
G01N27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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